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DC poleHodnotaJazyk
dc.contributor.authorKadlčík, Libor
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2015-01-19T08:44:47Z
dc.date.available2015-01-19T08:44:47Z
dc.date.issued2014
dc.identifier.citationElectroscope. 2014, č. 3, EDS 2014.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2014/Cislo3_2014/r8c3c2.pdf
dc.identifier.urihttp://hdl.handle.net/11025/11818
dc.format6 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2014 Electroscope. All Rights Reserved.en
dc.subjectautomobilové aplikacecs
dc.subjectreferenční zdroje napětícs
dc.subjectbandgapcs
dc.subjectsimulacecs
dc.titlePractical Design of a Self-Hosted Bandgap Voltage Reference for Automotive Applicationsen
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedPractical design of a voltage reference based on the well-known self-biased Brokaw bandgap core with bipolar-junction transistors (BJTs) is presented. The voltage reference has its own start-up circuit and a voltage regulator, which is capable of operation even under fast input supply voltage transients and its voltage regulation also removes an impact of the Early effect of the BJTs. The voltage reference operates with an external supply voltage from 5 V to 40 V in the temperatures from –50 °C to 200 °C; it occupies layout area of 0.011 mm2 if the 0.35 μm I3T50 ON Semiconductor technology is used. Simulation results show reference voltage of (1.20 ± 0.08) V is generated across process, temperature and supply voltage spread, including components mismatch.en
dc.subject.translatedautomotive applicationen
dc.subject.translatedvoltage referenceen
dc.subject.translatedbandgapen
dc.subject.translatedsimulationen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Číslo 3 (2014)
Číslo 3 (2014)

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