Název:	An Operational Transconductance Amplifiers Based Sinusoidal Oscillator Using CNTFETs
Autoři:	Bhargav, Avireni Srinivasulu, Avireni Pal, Dipankar
Citace zdrojového dokumentu:	2018 International Conference on Applied Electronics: Pilsen, 11th – 12th September 2018, Czech Republic, p. 1-6.
Datum vydání:	2018
Nakladatel:	Západočeská univerzita v Plzni
Typ dokumentu:	konferenční příspěvek other
URI:	http://hdl.handle.net/11025/35458
ISBN:	978–80–261–0721–7
ISSN:	1803–7232
Klíčová slova:	CNTFET;podmínky oscilace;frekvence kmitů;uzemněné kondenzátory;operační transkonduktanční zesilovače;sinusový oscilátor
Klíčová slova v dalším jazyce:	carbon nanotube field-effect transistor;condition of oscillations;frequency of oscillations;grounded capacitors;operational transconductance amplifiers;sinusoidal oscillator
Abstrakt v dalším jazyce:	A new sinusoidal oscillator using Carbon Nanotube Field Effect Transistors (CNTFET) based Operational Transconductance Amplifiers (CNOTA) with grounded capacitors is presented in this paper. The proposed current-mode oscillator thus implemented and having grounded capacitor feature, fulfils the need for realizations of systems used in combination with various other systems/ subsystems - both voltage-mode and current mode. It also ensures simplicity in implementation by using a single-ended CNOTA. The analytical model is given for the circuit leading to fulfilment of the condition of oscillation at tuned frequency. The proposed sinusoidal oscillator is primarily used in the field of signal dispensation applications, telecommunication networks, communication-equipment and control modules. The benefits derived from the introduced model are validated by simulation carried out at a supply voltage of ± 1.8V in Cadence virtuoso using spectre model libraries. They are further tested with the aid of 32 nm model of Carbon Nanotube Field Effect Transistor (CNTFET) technology obtained through open source. The proposed design (and the model provided) is found to be in good agreement with the obtained results.
Práva:	© Západočeská univerzita v Plzni
Vyskytuje se v kolekcích:	Applied Electronics 2018 Applied Electronics 2018

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