Název:	Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation
Autoři:	Štěpánek, Jan Bednář, Bedřich Drábek, Pavel
Citace zdrojového dokumentu:	ŠTĚPÁNEK, J., BEDNÁŘ, B., DRÁBEK, P. Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation. In: Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE 2019). Piscataway: IEEE, 2019. s. 1014-1019. ISBN 978-1-72813-666-0 , ISSN 2163-5137.
Datum vydání:	2019
Nakladatel:	IEEE
Typ dokumentu:	konferenční příspěvek conferenceObject
URI:	2-s2.0-85070618518 http://hdl.handle.net/11025/36307
ISBN:	978-1-72813-666-0
ISSN:	2163-5137
Klíčová slova v dalším jazyce:	MOSFET transistor;power electronic converter;thermal analysis;PN junction
Abstrakt v dalším jazyce:	This paper deals with the verification of the maximum current rating of MOSFET transistors in a discrete package TO-247AC. The main motivation for this analysis was the redesign of AC power drive chain for electric go kart with three phase power converter of the output nominal power 10kW, a supply voltage 48V and minimal switching frequency 50kHz. The inverter must be able to operate with short-term current overload up to 450A. A parallel combination of three power transistors is used to design the basic power switch. The HEXFET Power MOSFET transistor (IRFP4468PdF in a discrete case TO-247AC) was chosen as a basic structural element. We used DC analysis to verify the proper ies and imits of the discrete case TO-247AC. The maximum rated current through the MOSFET transistor was determined with respect to the maximum chip temperature and enclosure limitation. In order to accurately verify the measuring results f transistor temperature, a thermo-camera was used (the color is used to define the emissivity of measured object with reference ε = 0,9). Temperature was also measured by a thermometer PT100 sensor and estimated from the forward voltage on freewheeling diode.
Práva:	Plný text je přístupný v rámci univerzity přihlášeným uživatelům. © IEEE
Vyskytuje se v kolekcích:	Konferenční příspěvky / Conference papers (KEV) Konferenční příspěvky / Conference papers (RICE) OBD

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