Název:	Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments
Autoři:	Hricovíni, Karol Richter, Maria Christine Heckmann, Olivier Nicolai, Laurent Christophe Mariot, Jean Michel Minár, Jan
Citace zdrojového dokumentu:	HRICOVÍNI, K., RICHTER, M. C. H., HECKMANN, O., NICOLAI, L. C. H., MARIOT, J. M., MINÁR, J. Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments. Journal of physics-condensed matter, 2019, roč. 31, č. 28, s. [1-17]. ISSN 0953-8984.
Datum vydání:	2019
Nakladatel:	IOP Publishing
Typ dokumentu:	článek article
URI:	2-s2.0-85065807710 http://hdl.handle.net/11025/39561
ISSN:	0953-8984
Klíčová slova v dalším jazyce:	bismuth;Rashba effect;topological insulator;angle-resolved photoemission;spin-resolved photoemission;electronic structure calculations
Abstrakt v dalším jazyce:	The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.
Práva:	Plný text není přístupný. © IOP Publishing
Vyskytuje se v kolekcích:	Články / Articles (RAM) OBD

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