Title: | Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments |
Authors: | Hricovíni, Karol Richter, Maria Christine Heckmann, Olivier Nicolai, Laurent Christophe Mariot, Jean Michel Minár, Jan |
Citation: | HRICOVÍNI, K., RICHTER, M. C. H., HECKMANN, O., NICOLAI, L. C. H., MARIOT, J. M., MINÁR, J. Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments. Journal of physics-condensed matter, 2019, roč. 31, č. 28, s. [1-17]. ISSN 0953-8984. |
Issue Date: | 2019 |
Publisher: | IOP Publishing |
Document type: | článek article |
URI: | 2-s2.0-85065807710 http://hdl.handle.net/11025/39561 |
ISSN: | 0953-8984 |
Keywords in different language: | bismuth;Rashba effect;topological insulator;angle-resolved photoemission;spin-resolved photoemission;electronic structure calculations |
Abstract in different language: | The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy. |
Rights: | Plný text není přístupný. © IOP Publishing |
Appears in Collections: | Články / Articles (RAM) OBD |
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HRH+19_Bi_Review_accepted.pdf | 5,14 MB | Adobe PDF | View/Open Request a copy |
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