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dc.contributor.authorHricovíni, Karol
dc.contributor.authorRichter, Maria Christine
dc.contributor.authorHeckmann, Olivier
dc.contributor.authorNicolai, Laurent Christophe
dc.contributor.authorMariot, Jean Michel
dc.contributor.authorMinár, Jan
dc.date.accessioned2020-08-31T10:00:24Z-
dc.date.available2020-08-31T10:00:24Z-
dc.date.issued2019
dc.identifier.citationHRICOVÍNI, K., RICHTER, M. C. H., HECKMANN, O., NICOLAI, L. C. H., MARIOT, J. M., MINÁR, J. Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments. Journal of physics-condensed matter, 2019, roč. 31, č. 28, s. [1-17]. ISSN 0953-8984.en
dc.identifier.issn0953-8984
dc.identifier.uri2-s2.0-85065807710
dc.identifier.urihttp://hdl.handle.net/11025/39561
dc.format18 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.ispartofseriesJournal Of Physics-condensed Matteren
dc.rightsPlný text není přístupný.cs
dc.rights© IOP Publishingen
dc.titleTopological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experimentsen
dc.typečlánekcs
dc.typearticleen
dc.rights.accessclosedAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.en
dc.subject.translatedbismuthen
dc.subject.translatedRashba effecten
dc.subject.translatedtopological insulatoren
dc.subject.translatedangle-resolved photoemissionen
dc.subject.translatedspin-resolved photoemissionen
dc.subject.translatedelectronic structure calculationsen
dc.identifier.doi10.1088/1361-648X/ab1529
dc.type.statusPeer-revieweden
dc.identifier.document-number466268600001
dc.identifier.obd43929864
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
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