Full metadata record
DC pole | Hodnota | Jazyk |
---|---|---|
dc.contributor.author | Vacula, Patrik | |
dc.contributor.author | Husák, Miroslav | |
dc.contributor.editor | Pihera, Josef | |
dc.contributor.editor | Steiner, František | |
dc.date.accessioned | 2013-12-18T13:49:26Z | |
dc.date.available | 2013-12-18T13:49:26Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Electroscope. 2013, č. 5, EEICT + EDS. | cs |
dc.identifier.issn | 1802-4564 | |
dc.identifier.uri | http://ek702p10-ket.fel.zcu.cz/images/PDF/Rocnik2013/Cislo5_2013/r7c5c11.pdf | |
dc.identifier.uri | http://hdl.handle.net/11025/6626 | |
dc.format | 6 s. | cs |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | Západočeská univerzita v Plzni, Fakulta elektrotechnická | cs |
dc.relation.ispartofseries | Electroscope | cs |
dc.rights | © 2013 Electroscope. All rights reserved. | en |
dc.subject | Schwarz-Christoffelova transformace | cs |
dc.subject | numerické modelování | cs |
dc.subject | tranzistory MOS | cs |
dc.subject | MOS kanál | cs |
dc.title | Waffle MOS channel aspect ratio calculation with Schwarz-Christoffel transformation | en |
dc.type | článek | cs |
dc.type | article | en |
dc.rights.access | openAccess | en |
dc.type.version | publishedVersion | en |
dc.description.abstract-translated | The main goal of this work is to describe alternative way of effective channel width to length (W/L) ratio calculation for Waffle MOS structure. Due to non-conventional gate geometry of the Waffle MOS transistor compare to the fingers structure, the channel W/L ratio calculation is not trivial and conformal mapping can be used. In terms of mapping the Schwarz-Christoffel (SC) Transformation is proposed. The optimal element shape of the Waffle MOS is proposed, to be easy solved by SC conformal mapping. Because result of the conformal mapping for the Waffle MOS element is rectangle shape in transformed domain, the solving of the effective channel W/L ratio of the element is become very easy because it is aspect ratio of rectangle in transformed domain. | en |
dc.subject.translated | Schwarz-Christoffel transformation | en |
dc.subject.translated | numerical modelling | en |
dc.subject.translated | MOS transistors | en |
dc.subject.translated | MOS channel | en |
dc.type.status | Peer-reviewed | en |
Vyskytuje se v kolekcích: | Číslo 5 (2013) Číslo 5 (2013) |
Soubory připojené k záznamu:
Soubor | Popis | Velikost | Formát | |
---|---|---|---|---|
r7c5c12.pdf | Plný text | 633,04 kB | Adobe PDF | Zobrazit/otevřít |
Použijte tento identifikátor k citaci nebo jako odkaz na tento záznam:
http://hdl.handle.net/11025/6626
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