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dc.contributor.authorArab, Arian
dc.contributor.authorLiu, Xiaoran
dc.contributor.authorKöksal, Okan
dc.contributor.authorYang, Weibing
dc.contributor.authorChandrasena, Ravini U.
dc.contributor.authorMiddey, Srimanta
dc.contributor.authorKareev, Mikhail
dc.contributor.authorKumar, Siddharth
dc.contributor.authorHuşanu, Marius Adrian
dc.contributor.authorYang, Zhenzhong
dc.contributor.authorGu, Lin
dc.contributor.authorStrocov, Vladimir N.
dc.contributor.authorLee, Tienlin
dc.contributor.authorMinár, Jan
dc.contributor.authorPentcheva, Rossitza
dc.contributor.authorChakhalian, Jacques A.
dc.contributor.authorGray, Alexander X.
dc.date.accessioned2020-08-31T10:00:24Z-
dc.date.available2020-08-31T10:00:24Z-
dc.date.issued2019
dc.identifier.citationARAB, A., LIU, X., KÖKSAL, O., YANG, W., CHANDRASENA, R. U., MIDDEY, S., KAREEV, M., KUMAR, S., HUŞANU, M. A., YANG, Z., GU, L., STROCOV, V. N., LEE, T., MINÁR, J., PENTCHEVA, R., CHAKHALIAN, J. A., GRAY, A. X. Electronic Structure of a Graphene-like Artificial Crystal of NdNiO3. Nano letters, 2019, roč. 19, č. 11, s. 8311-8317. ISSN 1530-6984.en
dc.identifier.issn1530-6984
dc.identifier.uri2-s2.0-85074911191
dc.identifier.urihttp://hdl.handle.net/11025/39562
dc.format7 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.ispartofseriesNano Lettersen
dc.rightsPlný text není přístupný.cs
dc.rights© American Chemical Societyen
dc.titleElectronic Structure of a Graphene-like Artificial Crystal of NdNiO3en
dc.typečlánekcs
dc.typearticleen
dc.rights.accessclosedAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedArtificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes with typical information depths of a few angstroms. Here, we use a combination of bulk-sensitive soft X-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard X-ray photoelectron spectroscopy (HAXPES), and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO3 confined between two 4-unit cell-thick layers of insulating LaAlO3. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.en
dc.subject.translatedStrongly correlated oxidesen
dc.subject.translatedsoft X-ray angle-resolved photoelectron spectroscopyen
dc.subject.translatedhard X-ray photoelectron spectroscopyen
dc.identifier.doi10.1021/acs.nanolett.9b03962
dc.type.statusPeer-revieweden
dc.identifier.document-number497259300090
dc.identifier.obd43929866
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
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