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dc.contributor.authorKobayashi, Masaki
dc.contributor.authorAnh, Le Duc
dc.contributor.authorMinár, Jan
dc.contributor.authorKhan, Walayat
dc.contributor.authorBorek, Stephan
dc.contributor.authorHai, Pham Nam
dc.contributor.authorHarada, Yoshihisa
dc.contributor.authorSchmitt, Thorsten
dc.contributor.authorOshima, Masaharu
dc.contributor.authorFujimori, Atsushi
dc.contributor.authorTanaka, Masaaki
dc.contributor.authorStrocov, Vladimir N.
dc.date.accessioned2021-09-06T10:00:28Z-
dc.date.available2021-09-06T10:00:28Z-
dc.date.issued2021
dc.identifier.citationKOBAYASHI, M., ANH, LD., MINÁR, J., KHAN, W., BOREK, S., HAI, PN., HARADA, Y., SCHMITT, T., OSHIMA, M., FUJIMORI, A., TANAKA, M. ,STROCOV, VN. Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors. Physical Review B, 2021, roč. 103, č. 11. ISSN 2469-9950.cs
dc.identifier.issn2469-9950
dc.identifier.uri2-s2.0-85102697943
dc.identifier.urihttp://hdl.handle.net/11025/45057
dc.format10 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.ispartofseriesPhysical Review Ben
dc.rights© American Physical Societyen
dc.titleMinority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductorsen
dc.typečlánekcs
dc.typearticleen
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedFully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.en
dc.subject.translatedferromagnetic semiconductorsen
dc.subject.translatedSX-ARPESen
dc.subject.translatedelectronic structureen
dc.subject.translatedFMS materialsen
dc.subject.translatedspintronicsen
dc.identifier.doi10.1103/PhysRevB.103.115111
dc.type.statusPeer-revieweden
dc.identifier.document-number627559500001
dc.identifier.obd43933209
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
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