Title: The first active tunable wideband impedance matching circuit
Authors: Godara, Balwant
Fabre, Alain
Citation: Electroscope. 2008, č. 3.
Issue Date: 2008
Publisher: Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type: článek
ISSN: 1802-4564
Keywords: radiofrekvenční aplikace;SiGe BiCMOS;proudové konvejory
Keywords in different language: radio-frequency applications;current conveyors;SiGe BiCMOS
Abstract in different language: The first transistor-based impedance matching circuit for radio-frequency (RF) applications is introduced in this paper. It adapts arbitrary output impedances of RF blocks to desired values between 50ohmand 250ohm, from 0 to 5GHz, while occupying only 0.005mm² of circuit area in a 0.35μm SiGe BiCMOS process. Its superiority over traditional passive-element networks can be resumed by the following facts: flexible performance without the need for redesigning the components; adaptation of arbitrary impedances to desired values by the simple means of biasing current; extremely small form factors (the smallest observed); and matching over several gigahertz. Application to a low-noise amplifier validates the new topology.
Rights: Copyright © 2007-2010 Electroscope. All Rights Reserved.
Appears in Collections:Číslo 3 (2008)
Číslo 3 (2008)

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11025/463

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