Title: | Temperature-Dependent Hall Effect Studies of AZO Thin Films |
Authors: | Nedvědová, Lucie Novák, Petr Jansa, Zdeněk Minár, Jan |
Citation: | NEDVĚDOVÁ, L. NOVÁK, P. JANSA, Z. MINÁR, J. Temperature-Dependent Hall Effect Studies of AZO Thin Films. In 26th International Conference on Applied Physics of Condensed Matter (APCOM). Strbske Pleso: AIP Conference Proceedings, 2021. s. nestránkováno. ISBN: 978-0-7354-4138-5 , ISSN: 0094-243X |
Issue Date: | 2021 |
Publisher: | AIP Conference Proceedings |
Document type: | konferenční příspěvek ConferenceObject |
URI: | 2-s2.0-85118859139 http://hdl.handle.net/11025/51487 |
ISBN: | 978-0-7354-4138-5 |
ISSN: | 0094-243X |
Keywords in different language: | DOPED ZNO |
Abstract in different language: | Understanding of how the defects interact with each other and affect the properties of ZnO:Al thin films is one of great importance for improving their performance as a transparent conductive oxide. In the present work we studied the effect of annealing on the carrier concentration and Hall mobility of under-stoichiometric ZnO:Al films. Samples have been deposited by magnetron rf and dc co-sputtering from ceramic and metallic targets with the same Zn(98%)/Al(2%) concentration. Raman spectra taken prior and after temperature-dependent Hall measurements, fulfilled the understanding of the mosaic of defect changes. |
Rights: | Plný text není přístupný. © authors |
Appears in Collections: | Konferenční příspěvky / Conference papers (RAM) OBD |
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