Title:	Temperature dependence of leakage current and noise in Nb2O5 films
Authors:	Kopecký, Martin Chvátal, Miloš Sedláková, Vlasta Trčka, Tomáš
Citation:	Electroscope. 2011, č. 4, EDS 2011.
Issue Date:	2011
Publisher:	Západočeská univerzita v Plzni, Fakulta elektrotechnická
Document type:	konferenční příspěvek conferenceObject
URI:	http://147.228.94.30/images/PDF/Rocnik2011/Cislo4_2011/r5c4c1.pdf http://hdl.handle.net/11025/622
ISSN:	1802-4564
Keywords:	tenké vrstvy;Nb2O5;svodový proud;teplota
Keywords in different language:	thin films;leakage current;temperature;Nb2O5
Abstract in different language:	Dependence of leakage current on applied voltage was studied for samples of Nb2O5 thin films in the wide temperature range from 10 K to 400 K. Simultaneously low frequency noise characteristics and CV characteristics were measured and evaluated. The studied samples were niobium NbO capacitors with Nb2O5 insulating layer of thickness about 156 nm. IV characteristics measured for different temperature were evaluated and dominant charge carrier transport mechanisms were determined. The ohmic conduction is dominant for the low electric field. It was found that tunneling current is dominant for low temperatures and electric field higher than 125 MV / m while Poole-Frenkel and Shottky mechanisms are more pronounced for electric field below 125 MV / m and temperature above 350 K. The low frequency noise of 1/f type is observed for the tunneling current while G-R noise is observed in case that P-F and Shottky current is dominant.
Rights:	Copyright © 2007-2010 Electroscope. All Rights Reserved.
Appears in Collections:	Číslo 4 - EDS 2011 (2011) Číslo 4 - EDS 2011 (2011)

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