Title:	Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs
Authors:	Abd, Ahmed N. Habubi, Nadir Fadhil Al-Jaary, Ali H. Reshak Mansour, Hazim Louis
Citation:	ABD, A. N., HABUBI, N. F., AL-JAARY, A. H. R., MANSOUR, H. L. Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs. International Journal of Nanoelectronics and Materials, 2018, roč. 11, č. 3, s. 241-248. ISSN 1985-5761.
Issue Date:	2018
Publisher:	Universiti Malaysia Perlis
Document type:	článek article
URI:	2-s2.0-85050335470 http://hdl.handle.net/11025/31200
ISSN:	1985-5761
Keywords in different language:	MWCNTs;PSi;ECE;Electrical Properties;Photodetector
Abstract in different language:	In the present work, multiwall carbon nanotubes (MWCNTs) layers dispersed in DMF and citric acid deposited by drop casting on porous silicon (PSi) photodetector have been prepared by electrochemical etching (ECE) process at 25 mA/cm(2) for 20 min. X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transformation infrared spectroscopy (FTIR), energy dispersive X-ray (EDX), current-voltage (I-V) characteristics, capacitance-voltage(C-V) characteristics, spectral responsivity (R.) and specific detectivity (D*) before and after depositing MWCNTs layers were investigated. It was found that, the On/Off ratio was increased after depositing MWCNTs, while ideality factor and built in potential were decreased and this fact indicates that Al/PSi/c-Si/Al photodetector was nearly approaching the ideal diode characteristic after deposition process. Significant enhancement in spectral responsivity and specific detectivity were also noticed after depositing MWCNTs on porous matrix.
Rights:	Plný text není přístupný. © Universiti Malaysia Perlis
Appears in Collections:	Články / Articles (CTM) OBD

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