Title: Performance of silicon photomultipliers at low temperature
Authors: Nuruyev, S.
Ahmadov, G.
Sadigov, A.
Akberov, R.
Ahmadov, F.
Holík, Michael
Kopatch, Yu.
Citation: NURUYEV, S., AHMADOV, G., SADIGOV, A., AKBEROV, R., AHMADOV, F., HOLÍK, M., KOPATCH, Y. Performance of silicon photomultipliers at low temperature. Journal of Instrumentation, 2020, roč. 15, č. 3, s. 0-6. ISSN 1748-0221.
Issue Date: 2020
Publisher: IOP Publishing
Document type: článek
URI: 2-s2.0-85084180824
ISSN: 1748-0221
Keywords in different language: cryogenic detectors;photon detectors for UV;visible and IR photons;PIN diodes;APDs;Si-PMTs;G-APDs;CCDs;EBCCDs;EMCCDs;CMOS imagers
Abstract in different language: The performances of silicon photomultipliers with different structures are investigated at low temperature.The first sample is a micro pixel avalanche photodiode with deep buried pixel structure from Zecotek Photonics Inc. The second and third ones are multi-pixel photo counters with a surface pixel design from Hamamatsu Photonics. The influence of temperature on the main parameters of the photodiodes such as photon detection efficiency (PDE), gain, and capacitance was studied in the temperature range from 0C to -120C.
Rights: Plný text je přístupný v rámci univerzity přihlášeným uživatelům.
© IOP Publishing
Appears in Collections:Články / Articles (KAE)

Please use this identifier to cite or link to this item: http://hdl.handle.net/11025/39571

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