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DC poleHodnotaJazyk
dc.contributor.authorBarri, Dalibor
dc.contributor.authorJakovenko, Jiří
dc.contributor.editorPinker, Jiří
dc.date.accessioned2020-11-05T07:28:17Z
dc.date.available2020-11-05T07:28:17Z
dc.date.issued2020
dc.identifier.citation2020 International Conference on Applied Electronics: Pilsen, 8th – 9h September 2020, Czech Republic.en
dc.identifier.isbn978-80-261-0891-7 (Print)
dc.identifier.isbn978-80-261-0892-4 (Online)
dc.identifier.issn1803-7232 (Print)
dc.identifier.issn1805-9597 (Online)
dc.identifier.urihttp://hdl.handle.net/11025/39896
dc.format6 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plznics
dc.rights© Západočeská univerzita v Plznics
dc.subjectpředem automatizovaný měřicí tokcs
dc.subjecttranzistory MOScs
dc.subjectsondacs
dc.subjectsíťkacs
dc.subjectSC transformacecs
dc.subjectlepicí štítekcs
dc.titleComparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFETen
dc.typeconferenceObjecten
dc.typekonferenční příspěvekcs
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThis paper introduces the latest modern automatized advanced measurement flow of the diamond layout shape MOS transistors (DLS MOSFETs) as well as the rectangular layout shape (RLS) MOSFETs directly on a wafer. There are presented photos of the DLS MOSFET, from the highest level of the wafer down to the lowest level of the wafer, where each photo is individually commented. The next part of this article presents each item of the proposed measurement flow, such as an air compressor, temperature forcing system, probe cards, and precision semiconductor parameter analyzer. Also, there is shown, a photo of the probe card used for the measurement, as well as planning of its needles. Besides others, there is describe four-points measurement strategy, and the last part of this paper recommends the minimum number of measurements in order to obtain relevant data. Finally, the measured data is compared with a theoretic analytical expression based on the Schwarz-Christoffel transformationen
dc.subject.translatedadvance automatized measurement flowen
dc.subject.translatedDLS MOSFETen
dc.subject.translatedprobeen
dc.subject.translatedreticleen
dc.subject.translatedSC transformationen
dc.subject.translatedwaferen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Applied Electronics 2020
Applied Electronics 2020

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