Název: | Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors |
Autoři: | Kobayashi, Masaki Anh, Le Duc Minár, Jan Khan, Walayat Borek, Stephan Hai, Pham Nam Harada, Yoshihisa Schmitt, Thorsten Oshima, Masaharu Fujimori, Atsushi Tanaka, Masaaki Strocov, Vladimir N. |
Citace zdrojového dokumentu: | KOBAYASHI, M., ANH, LD., MINÁR, J., KHAN, W., BOREK, S., HAI, PN., HARADA, Y., SCHMITT, T., OSHIMA, M., FUJIMORI, A., TANAKA, M. ,STROCOV, VN. Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors. Physical Review B, 2021, roč. 103, č. 11. ISSN 2469-9950. |
Datum vydání: | 2021 |
Nakladatel: | American Physical Society |
Typ dokumentu: | článek article |
URI: | 2-s2.0-85102697943 http://hdl.handle.net/11025/45057 |
ISSN: | 2469-9950 |
Klíčová slova v dalším jazyce: | ferromagnetic semiconductors;SX-ARPES;electronic structure;FMS materials;spintronics |
Abstrakt v dalším jazyce: | Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials. |
Práva: | © American Physical Society |
Vyskytuje se v kolekcích: | Články / Articles OBD |
Soubory připojené k záznamu:
Soubor | Velikost | Formát | |
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Minar_117_Minority-spin_impurity_band_Minar.pdf | 4,16 MB | Adobe PDF | Zobrazit/otevřít |
Použijte tento identifikátor k citaci nebo jako odkaz na tento záznam:
http://hdl.handle.net/11025/45057
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