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DC poleHodnotaJazyk
dc.contributor.authorSolčanský, Marek
dc.contributor.authorVaněk, Jiří
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2012-11-12T08:37:06Z
dc.date.available2012-11-12T08:37:06Z
dc.date.issued2011
dc.identifier.citationElectroscope. 2011, č. 4, EDS 2011.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://147.228.94.30/images/PDF/Rocnik2011/Cislo4_2011/r5c4c7.pdf
dc.identifier.urihttp://hdl.handle.net/11025/626
dc.format4 s.cs
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2007-2010 Electroscope. All Rights Reserved.en
dc.subjectchemická pasivacecs
dc.subjectquinhydronecs
dc.subjectživotnost nosičů nábojecs
dc.titleCarrier bulk-lifetime measurement during solar cell productionen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.rights.accessopenAccessen
dc.type.versionpublishedVersionen
dc.description.abstract-translatedThe main material parameter of silicon is the minority carrier bulk lifetime and influences the effectiveness of photovoltaic cells. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.en
dc.subject.translatedchemical passivationen
dc.subject.translatedquinhydroneen
dc.subject.translatedcarrier bulk lifetimeen
dc.type.statusPeer-revieweden
Vyskytuje se v kolekcích:Číslo 4 - EDS 2011 (2011)
Číslo 4 - EDS 2011 (2011)

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