Název:	Theoretical and experimental investigation of SiC thin films surface
Autoři:	Dallaeva, Dinara Bilalov, Bilal Tománek, Pavel
Citace zdrojového dokumentu:	Electroscope. 2012, č. 5, EEICT 2012.
Datum vydání:	2012
Nakladatel:	Západočeská univerzita v Plzni, Fakulta elektrotechnická
Typ dokumentu:	konferenční příspěvek conferenceObject
URI:	http://147.228.94.30/images/PDF/Rocnik2012/Cislo5_2012/r6c5c4.pdf http://hdl.handle.net/11025/713
ISSN:	1802-4564
Klíčová slova:	tenké vrstvy;SiC;morfologie;struktura
Klíčová slova v dalším jazyce:	thin films;morphology;structure;SiC
Abstrakt v dalším jazyce:	This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formation with prescribed properties and hence the using of them in the technology for elements of electronic engineering and by this reason the surface of monocrystalline SiC was analyzed.
Práva:	© 2012 Electroscope. All rights reserved.
Vyskytuje se v kolekcích:	Číslo 5 - EEICT 2012 (2012) Číslo 5 - EEICT 2012 (2012)

Všechny záznamy v DSpace jsou chráněny autorskými právy, všechna práva vyhrazena.