Title: GaN Based Inverter Current-Collapse Behavior with Switching Frequency and Blocking Voltage
Authors: Skarolek, Pavel
Frolov, Filipp
Lettl, Jiří
Citation: 2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 163-167.
Issue Date: 2021
Publisher: University of West Bohemia
Document type: konferenční příspěvek
conferenceObject
URI: http://hdl.handle.net/11025/45586
ISBN: 978–80–261–0972–3 (Print)
978–80–261–0973–0 (Online)
ISSN: 1803–7232 (Print)
1805–9597 (Online)
Keywords: kolaps proudu;třífázový invertor;GaN;nitrid gallia
Keywords in different language: GaN;gallium nitride;current collapse;three phaseinverter
Abstract in different language: Current collapse in gallium nitridebased transistors limittheir use in high powerand high frequencyconverters. In some cases, it makes the conduction losses to double. This paper investigates the measurement of dynamic on-state resistance for various cases such as blocking voltage and switching frequency. The optimum minimal length of pulses wasdetermined in the case of three phase inverterto minimize the influence of current collapse.
Rights: © University of West Bohemia, 2021
Appears in Collections:Applied Electronics 2021
Applied Electronics 2021

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